| 500V VDMOS功率器件终端结构设计 |
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| 引用本文： | 刘三清,秦祖新,应建华. 500V VDMOS功率器件终端结构设计[J]. 微电子学, 1991, 0(5) |
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| 作者姓名： | 刘三清 秦祖新 应建华 |
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| 作者单位： | 华中理工大学(刘三清，秦祖新)，华中理工大学(应建华) |
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| 摘 要： | 本文论述了VDMOS器件的一种场板-分压环结合的终端结构。对1.5A/500V功率器件进行了分析和设计,并给出了终端电场分布的模拟结果。投片试制结果与设计预期参数相符。
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| 关 键 词： | VDMOS 功率器件 场板 分压环 |
Termination Structure Design for 500V Power VDMOS Devices |
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| Liu Sanqing,Qin Zuxin and Ying Jianhua. Termination Structure Design for 500V Power VDMOS Devices[J]. Microelectronics, 1991, 0(5) |
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| Authors: | Liu Sanqing Qin Zuxin Ying Jianhua |
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| Abstract: | A termination structure of field plate combined with a field limiting ring is described. Analysis and design of 1.5A/500V VDMOS devices with this termination structure as well as termination field distribution model are presented.Experimental results show a good consili ence with the designed parameters. |
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| Keywords: | VDMOS Power device Field plate Field limiting ring |
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