低偏压下化学气相沉积金刚石薄膜的生长形貌研究

在微波等离子体化学气相沉积装置中，研究了偏压电压、甲烷浓度及沉积气压对金刚石晶形显露的影响。实验结果表明，生长时施加低的衬底偏压对金刚石的晶形显露有较大的影响，正的偏压有利于(111)面显露，负偏压有利于(100)面显露。在低偏压条件下生长时，低的沉积气压和甲烷浓度有利于(111)面显露；而高的气压和甲烷浓度有利于(100)面显露。过高的甲烷浓度将恶化金刚石质量，出现菜花状组织，无明显的晶面显露。

Growth Morphology of CVD Diamond Film under Low Bias Voltage

The effects of bias voltage, methane concentration and gas pressure on the appearance of diamond crys-talline facets had been investigated in a microwave plasma vapor deposition reactor. The results showed that a low sub-strate bias voltage during the growth process would influence the appearance of diamond crystalline facets. A positive bias voltage was helpful for the formation of a (111) textured morphology, while a negative bias voltage was useful for a (100) textured growth. Under a low bias voltage, low gas pressure and methane concentration was useful for the de-veloping of a (111) textured morphology. Increasing gas pressure and methane concentration, the surface morphology would transform from (111) texture to (100) texture. Over high methane concentration would decrease the quality of diamond film and result in a flower - shape growth without apparent crystalline facets.