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基于电流控制模式的低压、高PSRR基准源
引用本文:张慧敏,周云,王璐霞,袁凯. 基于电流控制模式的低压、高PSRR基准源[J]. 微处理机, 2011, 32(5): 22-25. DOI: 10.3969/j.issn.1002-2279.2011.05.007
作者姓名:张慧敏  周云  王璐霞  袁凯
作者单位:电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054
摘    要:基于可调电流控制模式设计出一种低压、高电源抑制比的带隙基准电压源电路。采用电流控制模式和多反馈环路,提高电路的整体电源抑制比;通过电阻分压的方式,使电路达到低压,同时提供偏压,简化偏置电路。采用0.5μmCMOS N阱工艺,电路可在电源电压为1.5V时正常工作。使用Cadence Spectre进行仿真结果表明,低频时电源抑制比(PSRR)高达107dB。-10℃~125℃温度范围内,平均温度系数约7.17ppm/℃,功耗仅为0.525mW。此电路能有效地抑制制程变异。

关 键 词:CMOS基准电压源  独立电流模式  低电压  高电源抑制比

A Low Voltage High PSRR Reference Source Based on Regulated Current Mode Structure
ZHANG Hui-min,ZHOU Yun,WANG Lu-xia,YUAN Kai. A Low Voltage High PSRR Reference Source Based on Regulated Current Mode Structure[J]. Microprocessors, 2011, 32(5): 22-25. DOI: 10.3969/j.issn.1002-2279.2011.05.007
Authors:ZHANG Hui-min  ZHOU Yun  WANG Lu-xia  YUAN Kai
Affiliation:ZHANG Hui-min,ZHOU Yun,WANG Lu-xia,YUAN Kai(VLSI Design Center,University of Electronic Science and Technology of China,Chengdu 610054,China)
Abstract:A new bandgap voltage reference circuit with low voltage,high power supply rejection ratio(PSRR) based on a regulated current mode structure is presented.The proposed circuit utilizes a regulated current mode structure and some feedback loops to improve the overall PSRR.Using resistive subdivision reaches a low voltage and provides the bias voltage of transistors,simplified bias circuit.The circuit was designed with 0.5μm complementary metal oxide semiconductor transistor(CMOS) N-well technology,which worked at 1.5V power voltage.Cadence Spectre simulation results show PSRR is 107dB at low frequencies,the temperature coefficient from-10℃ to 125℃ temperature range is 7.17 ppm/℃ and the power consumption is only 0.525mW.This circuit shows robustness against process variation.
Keywords:CMOS voltage reference  A regulated current mode structure  Low voltage  High PSRR  
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