| 一种低压高精度CMOS带隙基准 |
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| 引用本文： | 王洪全,龚敏. 一种低压高精度CMOS带隙基准[J]. 微处理机, 2011, 32(5): 1-3,7. DOI: 10.3969/j.issn.1002-2279.2011.05.001 |
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| 作者姓名： | 王洪全 龚敏 |
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| 作者单位： | 四川大学物理科学与技术学院微电子技术四川省重点实验室,成都,610064 |
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| 摘 要： | 设计了一种改进的带隙基准电压源,通过采用分段电流补偿的方法,实现了低压高精度供电。研究基于TSMC 0.35μm CMOS 3V工艺基础,重点考虑主要工作温度区域输出电压随温度变化的精度问题。仿真结果表明,该电路可提供低至500mV的低压,实现了高阶电流补偿,在-40℃～+100℃温度范围内其温漂系数仅为3.7ppm/℃,在芯片主要工作温度范围内,输出基准电压最大偏差小于8μV,低频时电源抑制比为-70dB。
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| 关 键 词： | 低压带隙基准 电源抑制比 高阶补偿 |
A CMOS Bandgap Reference Circuit with Low-Voltage and High Precision |
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| WANG Hong-quan,GONG Min. A CMOS Bandgap Reference Circuit with Low-Voltage and High Precision[J]. Microprocessors, 2011, 32(5): 1-3,7. DOI: 10.3969/j.issn.1002-2279.2011.05.001 |
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| Authors: | WANG Hong-quan GONG Min |
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| Affiliation: | WANG Hong-quan,GONG Min(School of Physical Science and Technology,Sichuan University,Sichuan Province Key Lab of Microelectronics,Chengdu 610064,China) |
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| Abstract: | This paper introduce a improved bandgap reference voltage resource.Base on the solution of sub-range current compensation,the circuit can provide a high precision low-voltage.The circuit is designed with SMC 0.35μm CMOS 3V technology,and focus on temperature coefficient.According to the testing,this circuit can provide 500mV reference voltage at least,and the temperature coefficient is up to 3.7ppm/℃ over the-40℃~+100℃ temperature range.In the main temperature range,the Max deviation of voltage is less than 8μV,and the PSRR in only-70dB. |
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| Keywords: | Low-voltage bandgap reference PSRR High-level compensation |
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