Structure and properties of Ta/TaOx barrier films deposited by direct current magnetron sputtering |
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| Authors: | Y.M. Zhou Z. Xie H.N. Xiao P.F. Hu J. He |
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| Affiliation: | aSchool of Physics and Microelectronics Science, Hunan University, Hunan 410082, People's Republic of China;bCollege of Materials Science and Engineering, Hunan University, Hunan 410082, People's Republic of China;cThe 44th Research Institute of China Electronics Technology Group Corporation, 14 Huayuan Rd., Nanping, Chongqing 400060, People's Republic of China |
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| Abstract: | Double-layer Ta/TaOx films were deposited on glass substrates by direct current magnetron sputtering. The impact of the underlying TaOx on the structure and properties was also investigated using X-ray diffraction analysis, Auger electron microscopy, scanning electron microscopy and atomic force microscopy. This study finds that the structure and properties of Ta/TaOx films depends on the O2 flow during the under-layer TaOx deposition. As the O2 gas flow ratio increases from 3 to 7%, more and more oxidized amorphous TaOx films in the under-layer were formed, which caused the preferred growth orientation of upper Ta films to change from (200) to (221) systematically. Increasing the oxygen flow ratio of under-layer TaOx films also makes the average grain size of upper Ta films decrease from 10.7 to 2.2 nm. |
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| Keywords: | Ta TaOx Thin films Sputtering Crystal structure Surface properties |
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