Design and fabrication of the suspended high-Q spiral inductors with X-beams |
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Authors: | M C Hsieh D K Jair C S Lin |
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Affiliation: | (1) Department of Electronic Engineering, Kun Shan University, No. 949, Da Wan Rd, Yung-Kang, Tainan Hsien, 710, Taiwan, ROC;(2) Department of Mechanical Engineering, Kun Shan University, Tainan Hsien, Taiwan, ROC;(3) Department of Electronic Engineering, Fortune Institute of Technology, Kaoshiung, Taiwan |
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Abstract: | In this paper, deep sub-micron CMOS process compatible high Q on-chip spiral inductors with air gap structure were designed and fabricated. In the design the electromagnetic solver, SONNET,
and the finite element program, ANSYS, were used for electrical-characteristics and maximum mechanical strength, respectively.
The copper wires were capped with electroless Ni plating to prevent the copper from oxidizing. A Si3N4/SiO2 X-beam was designed to increase the mechanical strength of the inductor in air gap. The enhancement of maximum mechanical
strength of a spiral inductor with X-beams is more than 4,500 times. Among these structures, the measured maximum quality
factor (Q) of the suspending inductor and frequency at maximum Q are improved from 5.2 and 1.6 GHz of conventional spiral inductor to 7.3 and 2.1 GHz, respectively. |
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