直流磁控溅射铂电阻薄膜

根据薄膜理论和通过成膜工艺实验,研究了影响铂薄膜电阻温度系数的主要因素。1)对铂靶材料的纯度要求高,含杂质极少;2)淀积薄膜要有一定厚度,通常近于1μm才能有较大的α;3)成膜以后,需经过高温热处理,减少缺陷,结晶化改善。通过大量实验,使用高铝陶瓷基片或微晶玻璃基片,溅射铂薄膜的厚度为800nm,高温热处理1h,可以获得电阻温度系数为3.850×10-3/℃的铂电阻薄膜。

Resistance Film of Platinum by D.C.Magnetron Sputtering

The main factors effecting on TCR of the platinum resistance film are studied in this paper on the basis of film theory and experiments,the high purity of material Pt,suitable thickness of depositing film,(normally is near 1/μm)and the crystallization degree after high temperature treatment.#br#The TCR of platinum resistance film,whose thickness is 800 nm,sputtered on high alumina ceramic or microcrystal glass substrate,is 3.850×10-3/℃ after high tempenature heat-treatment for 1 hour.