| Ka频段宽带落入式微带结型隔离器 |
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| 引用本文： | 曾升权,冯双久.Ka频段宽带落入式微带结型隔离器[J].电子科技大学学报（自然科学版）,1997,26(3):314-317. |
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| 作者姓名： | 曾升权 冯双久 |
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| 作者单位： | 1.电子科技大学磁性工程系 成都 610054 |
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| 摘 要： | 从理论上指出原型落入式微带结型环行器(或隔离器)性能不佳的原因在于第二环行条件不满足,提出通过调整中心结的高度和匹配段长度可以改善阻抗匹配状况,提高器件的性能。据此制作了一个Ka频段落入式微带隔离器,在2.0GHz绝对带宽内(30.5GHz~32.5GHz)器件的插损小于1.0dB,隔离大于20dB。
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| 关 键 词： | 微带隔离器 落入式 毫米波器件 Ka频段 阻抗 匹配 |
| 收稿时间： | 1997-01-13 |
Wideband “Drop in” Microstrip Junction Isolators in Ka Band |
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| Affiliation: | 1.Dept. of Magnetic Eng.,UEST of China Chengdu 610054 |
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| Abstract: | It is pointed out theoretically that the prototype drop in microstrip junction circulators (or isolators) without excellent operating characteristics are due to unsatisfaction of the second circulation condition.It is proposed that the impedance matching condition can be improved by changing the height of the centre junction and length of matching sections,which lead to the improvement of the operating characteristics of the devices.A drop in isolator that operates in Ka band is obtained,which exhibits less than 1 dB insertion loss and greater than 20 dB isolation in 2.0 GHz absolute bandwidth(30.5~32.5 GHz). |
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