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| 偏压量子效率测试在薄膜太阳能电池特性分析中的应用 | |
| 引用本文： | 黄志鹏,赵守仁,孙雷,孙朋超,张传军,邬云华,曹鸿,王善力,胡志高,杨平雄,褚君浩.偏压量子效率测试在薄膜太阳能电池特性分析中的应用[J].红外与毫米波学报,2014,33(4):395-399. |
| 作者姓名： | 黄志鹏 赵守仁 孙雷 孙朋超 张传军 邬云华 曹鸿 王善力 胡志高 杨平雄 褚君浩 |
| 作者单位： | 1. 华东师范大学极化材料与器件教育部重点实验室 上海200241;上海太阳能电池研究与发展中心 上海201201 2. 上海太阳能电池研究与发展中心 上海201201;中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 3. 上海太阳能电池研究与发展中心 上海201201 4. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海,200083 5. 华东师范大学极化材料与器件教育部重点实验室 上海200241 |
| 基金项目： | 中国科学院知识创新项目;国家自然科学基金项目（面上项目,重点项目,重大项目）Foundation items: Supported by Funds of the Chinese Academy of Sciences for Key Topics in Innovation Engineering (Grant No. KGCX2-YW-38), and 2012-Shanghai, "Science and Technology Innovation Action Plan" Energy-Saving Emission Reduction Project, China (Grant No. 12dz1201000). |
| 摘 要： | 薄膜太阳能电池在不同偏压下的量子效率(QE)会呈现非常不一样的结果.对不同波长范围内偏压量子效率的分析可以研究薄膜太阳能电池窗口层区域杂质补偿情况、主结势垒高低、背势垒高度等,还可以得出耗尽区宽度以及少子扩散长度等重要参数.通过实验测量与理论分析,给出了薄膜太阳能电池耗尽区宽度(W)和少子扩散长度(Ln)与偏压量子效率的关系,提出了一种新的拟合耗尽区宽度(W)和少子扩散长度(Ln)的方法,探讨了偏压量子效率测试在薄膜太阳能电池特性分析中的应用. |
| 关 键 词： | 偏压量子效率 薄膜太阳能电池 耗尽区宽度 少子扩散长度 |
| 收稿时间： | 2013/2/26 |
| 修稿时间： | 2014/5/16 0:00:00 |
Voltage dependent quantum efficiency measurement in property study of thin film solar cells |
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| HUANG Zhi-Peng,ZHAO Shou-Ren,SUN Lei,SUN Peng-Chao,ZHANG Chuan-Jun,WU Yun-Hu,CAO Hong,WANG Shan-Li,HU Zhi-Gao,YANG Ping-Xiong and CHU Jun-Hao.Voltage dependent quantum efficiency measurement in property study of thin film solar cells[J].Journal of Infrared and Millimeter Waves,2014,33(4):395-399. | |
| Authors: | HUANG Zhi-Peng ZHAO Shou-Ren SUN Lei SUN Peng-Chao ZHANG Chuan-Jun WU Yun-Hu CAO Hong WANG Shan-Li HU Zhi-Gao YANG Ping-Xiong and CHU Jun-Hao |
| Affiliation: | Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University |
| Abstract: | Quantum efficiency measured at different voltage varies in a wide range. Compensation of the window layer, quality of the main junction and the value of back contact barrier can be derived from the voltage dependent quantum efficiency at different wavelength region. Depletion width and diffusion length of the minority carrier can be calculated from the apparent quantum efficiency. Relationship of the depletion width, diffusion length of the minority carrier and apparent quantum efficiency is presented in the article. A new method to calculate the depletion width and diffusion length of the minority carrier is proposed. Furthermore, we discussed the feasibility of studying thin film solar cells via its voltage dependent quantum efficiency. |
| Keywords: | voltage dependent quantum efficiency thin film solar cells depletion width diffusion length application |
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