| 利用附加电感实现高频功率MOSFET谐振栅极驱动 |
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| 引用本文： | 沈刚,王华民.利用附加电感实现高频功率MOSFET谐振栅极驱动[J].电气传动,2005,35(1):28-30. |
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| 作者姓名： | 沈刚 王华民 |
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| 作者单位： | 西安理工大学;西安理工大学 |
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| 摘 要： | 通过在功率MOSFET栅极驱动回路增加附加电感,利用栅极电容与附加电感的能量交换实现谐振栅极驱动,从而降低驱动功率损耗.保证该电路可以在高频情况下正常运行.实验验证了该方法的正确性与实用性.
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| 关 键 词： | 功率MOSFET 附加电感 功率损耗 高频 |
Implement of Resonant Gate Drive for High Frequency Power MOSFET with Additional Inductor |
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| Shen Gang,Wang Huamin.Implement of Resonant Gate Drive for High Frequency Power MOSFET with Additional Inductor[J].Electric Drive,2005,35(1):28-30. |
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| Authors: | Shen Gang Wang Huamin |
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| Affiliation: | Shen Gang Wang Huamin |
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| Abstract: | A resonant gate drive circuit is introduced in this paper. In this circuit, an additional inductor is connected to the gate of power MOSFET. Hence, the energy between the gate capacitance and the additional inductor can be exchanged, the driving power dissipation can decrease. All those enable the circuit to operate well in high frequency. Through experiments, it proves that the circuit is correct and practical. |
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| Keywords: | power MOSFET additional inductor power dissipation high frequency |
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