| AlN基板与金属化层界面的分析电镜研究 |
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| 引用本文： | 田民波,梁彤翔. AlN基板与金属化层界面的分析电镜研究[J]. 微纳电子技术, 1995, 0(3) |
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| 作者姓名： | 田民波 梁彤翔 |
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| 作者单位： | 清华大学材料科学与工程系 |
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| 摘 要： | 利用各种分析电镜观察了掺杂助烧剂和未掺杂助烧剂的ＡｌＮ陶瓷的微观结构特征，鉴别了ＡｌＮ中的第二相，研究了ＡｌＮ基板上薄膜（Ａｕ－Ｐｔ－Ｔｉ）和厚膜（Ｍｏ－Ｍｎ）金属化界面的结构。
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| 关 键 词： | 氮化铝，烧结，薄膜，厚膜，位错，层错，反相畴界 |
Analytical Electronic Microscope study of AlN Substrates and Metallization Interfaces |
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| Tian Minbo,Liang Tongxiang. Analytical Electronic Microscope study of AlN Substrates and Metallization Interfaces[J]. Micronanoelectronic Technology, 1995, 0(3) |
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| Authors: | Tian Minbo Liang Tongxiang |
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| Abstract: | By means of analytical electronic microsccpes we observed the mi-crostructure of doped and undoped AlN ceramics, inspected the second phase in AlN, studied the interface structure of Au-Pt-Ti thin film and Mo-Mn thick film metallization. |
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| Keywords: | AlN Sintering Thin film Thick film Dislocation Stacking faults Antiphase domain boundaries |
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