| 锥形图形衬底上氮化镓薄膜生长和表征 |
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| 引用本文： | Jing Liang,Xiao Hongling,Wang Xiaoliang,Wang Cuimei,Deng Qingwen,Li Zhidong,Ding Jieqin,Wang Zhanguo,Hou Xun. 锥形图形衬底上氮化镓薄膜生长和表征[J]. 半导体学报, 2013, 34(11): 113002-5 |
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| 作者姓名： | Jing Liang Xiao Hongling Wang Xiaoliang Wang Cuimei Deng Qingwen Li Zhidong Ding Jieqin Wang Zhanguo Hou Xun |
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| 作者单位： | [1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China [2]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China [3]ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for lnformatics, Beijing 100083, China [4]Xi＇an Jiaotong University, Xi＇an 710049, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Nos. 61076052, 60906006）, the State Key Development Program for Basic Research of China （No. 2012CB619303）, and the National High Technology Research and Development Program of China （No. 2011AA050514）. |
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| 摘 要： | GaN films are grown on cone-shaped patterned sapphire substrates(CPSSs)by metal-organic chemical vapor deposition,and the influence of the temperature during the middle stage of GaN growth on the threading dislocation(TD)density of GaN is investigated.High-resolution X-ray diffraction(XRD)and cathodeluminescence(CL)wereusedtocharacterizetheGaNfilms.TheXRDresultsshowedthattheedge-typedislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates(CSSs).Furthermore,whenthegrowthtemperatureinthemiddlestageofGaNgrownonCPSSdecreases,the full width at half maximum of the asymmetry(102)plane of GaN is reduced.This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs.The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS,and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.
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| 关 键 词： | GaN threading dislocation patterned sapphire substrate metal-organic chemical vapor deposition |
| 修稿时间： | 2013-05-02 |
The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD |
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| Jing Liang,Xiao Hongling,Wang Xiaoliang,Wang Cuimei,Deng Qingwen,Li Zhidong,Ding Jieqin,Wang Zhanguo and Hou Xun. The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD[J]. Chinese Journal of Semiconductors, 2013, 34(11): 113002-5 |
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| Authors: | Jing Liang Xiao Hongling Wang Xiaoliang Wang Cuimei Deng Qingwen Li Zhidong Ding Jieqin Wang Zhanguo Hou Xun |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083, China;Xi'an Jiaotong University, Xi'an 710049, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Xi'an Jiaotong University, Xi'an 710049, China |
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| Abstract: | GaN films are grown on cone-shaped patterned sapphire substrates (CPSSs) by metal-organic chemical vapor deposition, and the influence of the temperature during the middle stage of GaN growth on the threading dislocation (TD) density of GaN is investigated. High-resolution X-ray diffraction (XRD) and cathode-luminescence (CL) were used to characterize the GaN films. The XRD results showed that the edge-type dislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates (CSSs). Furthermore, when the growth temperature in the middle stage of GaN grown on CPSS decreases, the full width at half maximum of the asymmetry (102) plane of GaN is reduced. This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs. The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS, and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases. |
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| Keywords: | GaN threading dislocation patterned sapphire substrate metal-organic chemical vapor deposition |
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