| SPICE模拟纳米技术场效应晶体管圆角效应的建模技术 |
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| 引用本文： | Sun Wei,Yang Dake. SPICE模拟纳米技术场效应晶体管圆角效应的建模技术[J]. 半导体学报, 2013, 34(11): 114008-4 |
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| 作者姓名： | Sun Wei Yang Dake |
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| 作者单位： | School of Electronic and Mechanical Engineering, Wuyi University;Meihua Industrial Group Ltd. |
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| 摘 要： | This paper presents a novel poly(PC)and active(RX)corner rounding modeling approach to SPICE simulations.A set of specially designed structures was used for measurement data collection.PC and RX corner rounding equations have been derived based on an assumption that the corner rounding area is a fragment of a circle.The equations were modified to reflect the gouging effect of physical silicon wafers.The modified general equations were implemented in the SPICE model to enable the model to describe the corner rounding effect.The good fittings between the SPICE model simulation results and the silicon data demonstrated in this paper proved that the designed corner rounding model is practical and accurate.
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| 关 键 词： | SPICE model MOSFETs poly and active corner rounding nanometer technology |
The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs |
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| Sun Wei and Yang Dake. The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs[J]. Chinese Journal of Semiconductors, 2013, 34(11): 114008-4 |
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| Authors: | Sun Wei and Yang Dake |
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| Affiliation: | School of Electronic and Mechanical Engineering, Wuyi University, Wuyishan 354300, China;Meihua Industrial Group Ltd., Wuyishan 354300, China;School of Electronic and Mechanical Engineering, Wuyi University, Wuyishan 354300, China;Meihua Industrial Group Ltd., Wuyishan 354300, China |
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| Abstract: | This paper presents a novel poly (PC) and active (RX) corner rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX corner rounding equations have been derived based on an assumption that the corner rounding area is a fragment of a circle. The equations were modified to reflect the gouging effect of physical silicon wafers. The modified general equations were implemented in the SPICE model to enable the model to describe the corner rounding effect. The good fittings between the SPICE model simulation results and the silicon data demonstrated in this paper proved that the designed corner rounding model is practical and accurate. |
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| Keywords: | SPICE model MOSFETs poly and active corner rounding nanometer technology |
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