Al_xGa(1-x)As LPE掺杂机理研究 |
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引用本文: | 范小宝,徐宝琨. Al_xGa(1-x)As LPE掺杂机理研究[J]. 固体电子学研究与进展, 1985, 0(4) |
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作者姓名: | 范小宝 徐宝琨 |
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作者单位: | 吉林大学电子科学系,吉林大学电子科学系 上海交通大学电子工程系 |
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摘 要: | 本文将D.T.J.Hurle的点缺陷平衡模型推广到三元Ⅲ-V族化合物.从理论上计算了Sn、Ge和Te等元素掺杂Al_xGa_(1-x)As时,载流子浓度与液相杂质浓度的关系曲线.计算结果与实验值相符.
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A Study of Incorporation in Al_xGa_(1-x)As LPE |
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Abstract: | The point defect model that D. T.J. Hurle advanced is extended to the ternary Ⅲ-V compounds. The carrier concentration as a function of liquid mole fraction of impurity and χAlAs is calculated in Sn, Ge, and Te doped AlχGal-χAs, respectively.All the calculations are compared with the experimental results with good agreement. |
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