| Ge_xSi_(1-x)/Si异质结器件的研制现状 |
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| 引用本文： | 李秀清. Ge_xSi_(1-x)/Si异质结器件的研制现状[J]. 微纳电子技术, 1993, 0(2) |
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| 作者姓名： | 李秀清 |
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| 作者单位： | 机电部第13研究所 石家庄 |
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| 摘 要： | 介绍了应变层Ge_xSi_(1-x)/Si异质结构的生长、材料特性及其在异质结双极晶体管(HBT)、双极反型沟道场效应晶体管(BICFET)、调制掺杂场效应晶体管(MODFET)、谐振隧道二极管、负阻效应晶体管(NERFET)、毫米波混合隧道雪崩渡越时间(MITATT)二极管和光电探测器等器件中的应用状况,并指出了其发展前景。
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| 关 键 词： | 半导体器件 异质结构 硅 锗 |
Recent Development of Ge_xSi_(1-x)/Si Heterojunction Devices |
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| Li Xiuqing. Recent Development of Ge_xSi_(1-x)/Si Heterojunction Devices[J]. Micronanoelectronic Technology, 1993, 0(2) |
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| Authors: | Li Xiuqing |
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| Abstract: | This paper describes the growth of strained Ge_xSi_(1-x)/Si layers,characteristics of the materials and also their applications in heterojunction bipolar transistors (HBT), bipolar inversion-channel FET (BICFET), modulation doped field effect transistors (MODFET), resonant tunnelling diodes, millimetre-wave mixed tunnel-avalanche transit-time (MITATT)diodes, negative resistance FET (NERFET)and optical detectors as well. Their development propects are also given. |
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| Keywords: | Semiconductor device Heterostructure Silicon Germanium |
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