射频负偏压与放电电流对c-BN薄膜形成的影响

用ＡＲＥ（Ａｃｔｉｖｅ Ｒｅａｃｔｉｏｎ Ｅｖａｐｏｒａｔｉｏｎ） 装置， 在Ｎ２／Ａｒ 混合等离子体弧光放电气氛下， 通过电子束蒸镀纯硼， 同时伴以一定能量的正离子轰击生长的膜表面的方法， 在单晶硅（１００） 基片上成功地合成了立方氮化硼（Ｃｕｂｉｃ Ｂｏｒｏｎ Ｎｉｔｒｉｄｅ ， 简称ｃＢＮ） 薄膜， 并对基片射频自偏压和等离子体弧光放电电流对ｃＢＮ 膜形成的影响进行了研究。用富立叶变换红外（ＦＴＩＲ） 透射谱和ＡＥＳ对沉积的膜进行相结构和化学成分分析。ＦＴＩＲ 透射谱表明， 在波数约１ ０６０ｃｍ － １ 处， 存在很强的ｃＢＮ 的吸收峰。随基片所加射频负偏压及等离子体弧光放电电流的增大， 膜中的ｃＢＮ 含量增大； 当射频偏压为－ ２００ Ｖ， 放电电流为１５ Ａ 时， 沉积的膜为单相ｃＢＮ 膜。ＡＥＳ 的成分深度分布表明，ｃＢＮ 膜中的Ｂ， Ｎ 接近等原子比

Effect of negative radio frequency bias and plasma discharge current on formation of c BN film

c BN films were deposited on single crystal Si(100) substrates using active reaction evaporation(ARE) technique, in which pure boron was evaporated by electronic beam, the growing film was simultaneously bombarded by energetic ions in radio frequency plasma discharge of nitrogen and argon. The films were characterized using fourier transform inferred (FTIR) spectra and AES. FTIR spectra showed a strong absorption peak around 1 060 cm -1 indicating the formation of c BN. The amount of c BN in film increased with increase in radio frequency bias voltage and discharge current. Nearly pure c BN film formed at radio frequency self bias of -200 V and discharge current of 15A. AES concentration depth profile showed a nearly stoichiometric BN film