| IGCT--GTO技术的最新进展 |
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| 引用本文： | 刘国友.IGCT--GTO技术的最新进展[J].半导体技术,2000,25(3):9-9. |
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| 作者姓名： | 刘国友 |
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| 作者单位： | 株洲电力机车研究所,株洲,412001 |
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| 摘 要： | IGCT是一种基于 GTO结构、利用集成门极结构进行门极硬驱动、采用缓冲层结构及阳极透明发射极技术的新型大功率半导体开关器件 ,具有晶闸管的通态特性及晶体管的开关特性。本文将对 IGCT的开发过程、结构特点、器件特性及其应用前景等进行介绍。
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| 关 键 词： | GTO 集成门极 半导体开关器件 IGCT 晶闸管 |
IGCT: The Recent Development of GTO |
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| Liu Guoyou.IGCT: The Recent Development of GTO[J].Semiconductor Technology,2000,25(3):9-9. |
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| Authors: | Liu Guoyou |
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| Abstract: | IGCT is a new type of power semiconductor devices based on GTO structure,hard drived by an integrated gate unit and adopted from buffer layer transparent emitter technology.It combines the on state features of a thyristor with the rugged switching behaviour of a transistor.The devolopment process,the structure features,the properties and the applications of IGCT are reviewed in this paper. |
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| Keywords: | GTO IGCT Integrated gate Hard drive Buffer layer Transparent emitter |
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