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Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts
Authors:K. Ejderha, A. Zengin, &#x  . Orak, B. Tasyurek, T. Kilin  ,A. Turut
Affiliation:a Department of Physics, Faculty of Sciences and Arts, Bingöl University, Bingöl, Turkey;b Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum, Turkey;c Department of Physics, Faculty of Sciences and Arts, Erzincan University, Erzincan, Turkey
Abstract:
Keywords:Metal–  semiconducror contact   Schottky barrier height
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