Transport coefficients of AlGaN/GaN heterostructures |
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| Authors: | M Ahoujja W C Mitchel S Elhamri R S Newrock D B Mast J M Redwing M A Tischler J S Flynn |
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| Affiliation: | (1) Wright Laboratory, WL/MLPO, W-PAFB, 45433, OH;(2) Department of Physics, University of Dayton, 45469 Dayton, OH;(3) Department of Physics, University of Cincinnati, 45221-0011 Cincinnati, OH;(4) Advanced Technology Materials, Inc., 7 Commerce Dr., 06810 Danbury, CT |
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| Abstract: | We have experimentally determined the effective mass (m*) of GaN, the classical (τ
c), and quantum (τ
q) scattering times for a two-dimensional electron gas residing at the interface of an AlGaN/GaN heterostructure, using the
Shubnikovde Haas effect. The ratio of the two scattering times, τ
c/τ
q, suggests that, at low temperatures, the scattering mechanism limiting the mobility is due to remote ionized impurities located
in AlGaN. This study should provide sample growers with information useful for improving the quality of the nitride heterostuctures. |
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| Keywords: | AlGaN/GaN heterostructure transport |
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