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Analytic model of parasitic capacitance attenuation in CMOS deviceswith hyperthin oxides |
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| Authors: | Ahmed K. Ibok E. Hauser J. |
| Affiliation: | Conexant Syst. Inc., Newport Beach, CA; |
| Abstract: | The parasitic accumulation capacitance attenuation in MOS structures with hyper-thin oxides has been modelled using a distributed RC network. The simple analytic model is in excellent agreement with a two-dimensional numerical simulation and experimental data |
| Keywords: | |