Dielectric and piezoelectric properties of perovskite materials at cryogenic temperatures |
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Authors: | D-S Paik S-E Park T R Shrout W Hackenberger |
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Affiliation: | (1) Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA |
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Abstract: | Dielectric and piezoelectric properties of perovskite materials including La modified Pb(Zr, Ti)O3 (PZT's), (Ba, Sr)TiO3 (BST) polycrystalline ceramics and Pb(Zn1/3 Nb2/3)O3-PbTiO3 (PZN-PT) single crystals were investigated for capacitor and actuator applications at cryogenic temperatures. PZTs were compositionally engineered to have decreased Curie temperatures (Tc) by La and Sn doping in order to compensate for the loss of extrinsic contributions to piezoelectricity at cryogenic temperatures. Enhanced extrinsic contributions resulted in piezoelectric coefficients (d33) as high as 250 pC/N at 30 K, superior to that of conventional DOD Type PZT's (d33~100 pC/N). This property enhancement was associated with retuning to the MPB at cryogenic temperatures. 5/95 BST with a dielectric maximum at 57 K was investigated to obtain high electrostrictive properties or E-field induced piezoelectricity. Coupling coefficients (k31) 25% comparable to those of the cryogenic PLZT piezoelectrics were observed at d.c. bias of 1.5 kV/cm and 50 K. Though significantly lower than the room temperature values, PZN-PT rhombohedral single crystals exhibited d33> 500 pC/N at 30 K. |
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