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Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator |
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| Authors: | P.-Y. Chan M. Gogna E. Suarez F. Al-Amoody S. Karmakar B. I. Miller E. K. Heller J. E. Ayers F. C. Jain |
| Affiliation: | 1. Department of Electrical and Computer Engineering, University of Connecticut, Storrs, CT, 06269-2157, USA 2. Global Foundries, Inc., Malta, NY, 12020, USA 3. Intel Corporation, Hillsboro, OR, 97124, USA 4. Synopsys, Inc., Ossining, NY, 10562, USA |
| Abstract: | An indium gallium arsenide quantum-dot-gate field-effect transistor using Zn0.95Mg0.05S as the gate insulator is presented in this paper, showing three output states which can be used in multibit logic applications. The spatial wavefunction switching effect in this transistor has been investigated, and modeling simulations have shown supporting evidence that additional output states can be achieved in one transistor. |
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