|
|||||
|
|
TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates |
|
| Authors: | Jae Jin Kim R N Jacobs L A Almeida M Jaime-Vasquez C Nozaki David J Smith |
| Affiliation: | 1. School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA 2. U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA 3. Department of Physics, Arizona State University, Tempe, AZ, USA |
| Abstract: | A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |