|
|||||
|
|
Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation |
|
| Authors: | Pan XiaoYu Guo HongXia Feng YaHui Liu YiNong Zhang JinXin Li Zhuang Luo YinHong Zhang FengQi Wang Tan Zhao Wen Ding LiLi Xu JingYan |
| Affiliation: | 1.The Key Laboratory of Particle and Radiation Imaging, Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing, 100084, China ;2.State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an, 710024, China ;3.School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China ;4.School of Aerospace Science and Technology, Xidian University, Xi’an, 710126, China ;5.The 38th Research Institute of China Electronics Technology Group Corporation, Hefei, 230088, China ; |
| Abstract: | Science China Technological Sciences - The single-photon absorption induced single event transient in the silicon-germanium heterojunction bipolar transistor is investigated. The laser wavelength... |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |