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Properties of Sn-doped Bi2Te3 ? x Sex single crystals |
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| Authors: | T E Svechnikova V S Zemskov M K Zhitinskaya S A Nemov N V Polikarpova E Müller D Platzek |
| Affiliation: | 1. Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Leninskii pr. 49, Moscow, 119991, Russia 2. St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia 3. Institute of Materials Research, German Aerospace Center DLR, D-51170, K?ln, Germany |
| Abstract: | The effect of Sn doping (0.2 and 0.4 at %) on the properties of Czochralski-grown single crystals of n-type Bi2Te2.85Se0.15 solid solutions is studied. Thermoelectric power, electrical conductivity, thermal conductivity, and Hall effect measurements in the range 77–400 K demonstrate that Sn doping has a significant effect on the transport properties of the solid solutions. Between 300 and 370 K, the thermoelectric figure of merit of Bi1.996Sn0.004Te2.85Se0.15 single crystals is higher than that of the Sn-free solid solution. In addition, hot-microprobe thermoelectric power measurements, highly sensitive to variations in carrier concentration, indicate that the Sn-doped single crystals are very uniform in electrical properties, both along the growth direction and radially. |
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