| 射频功率LDMOS槽形漂移区结构优化设计 |
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| 引用本文： | 王一鸣,李泽宏,王小松,翟向坤,张波,李肇基. 射频功率LDMOS槽形漂移区结构优化设计[J]. 半导体学报, 2006, 27(8): 1441-1446 |
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| 作者姓名： | 王一鸣 李泽宏 王小松 翟向坤 张波 李肇基 |
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| 作者单位： | 电子科技大学微电子与固体电子学院，成都 610054;电子科技大学微电子与固体电子学院，成都 610055;电子科技大学微电子与固体电子学院，成都 610056;电子科技大学微电子与固体电子学院，成都 610057;电子科技大学微电子与固体电子学院，成都 610058;电子科技大学微电子与固体电子学院，成都 610059 |
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| 摘 要： | 对射频功率LDMOS槽形漂移区的结构进行了优化设计.基于射频功率LDMOS的频率特性,提出了矩形、倒三角形和正三角形槽结构,对槽的位置、深度、宽度进行分析,在满足相同的耐压和导通电阻条件下,得出最优结构为正三角形槽结构,该结构实现了最大程度地减小寄生反馈电容的目的,寄生反馈电容减小了24%,LDMOS的截止频率提高了15%.
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| 关 键 词： | 射频功率LDMOS 槽形结构 寄生反馈电容 截止频率 射频功率 LDMOS 槽形 漂移区 最优结构 优化设计 Power Structure Region Drift Trench Design 截止频率 电容 寄生反馈 程度 条件 导通电阻 耐压 分析 |
| 文章编号： | 0253-4177(2006)08-1441-06 |
| 收稿时间： | 2005-12-30 |
| 修稿时间： | 2006-03-03 |
Optimization Design for Trench Drift Region Structure in RF Power LDMOS |
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| Wang Yiming,Li Zehong,Wang Xiaosong,Zhai Xiangkun,Zhang Bo and Li Zhaoji. Optimization Design for Trench Drift Region Structure in RF Power LDMOS[J]. Chinese Journal of Semiconductors, 2006, 27(8): 1441-1446 |
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| Authors: | Wang Yiming Li Zehong Wang Xiaosong Zhai Xiangkun Zhang Bo Li Zhaoji |
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| Affiliation: | College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610054,China;College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610055,China;College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610056,China;College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610057,China;College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610058,China;College of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology,Chengdu 610059,China |
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| Abstract: | A RF power LDMOS with a trench drift region is optimally designed. Rectangular,converse triangular,and triangular trench structures are proposed based on its frequency characteristic,and the position the depth,and the width of the trench are analyzed.Under the same condition of breakdown voltage and on-resistance,the optimized trench structure is triangular,which can decrease the feedback capacitance by 24% and increase the cut-off frequency by 15%. |
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| Keywords: | RF power LDMOS trench structure parasitic feedback capacitance cut-off frequency |
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