Composition, structure, and dielectric properties of SiC-AlN ceramic materials |
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Authors: | G K Safaraliev Sh Sh Shabanov S A Sadykov B A Bilalov A Sh Agalarov |
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Affiliation: | 1. Dagestan State University, ul. M. Gadzhieva 43a, Makhachkala, 367025, Dagestan, Russia
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Abstract: | We have studied the structure, relative dielectric permittivity (?), and dielectric loss tangent (tan??) of SiC-AlN ceramic materials. The results demonstrate that both ? and tan?? are anomalously high in the composition range 30?C50 wt % AlN at low frequencies (0.1 kHz). We show that the increase in ? may be due to a barrier effect on silicon carbide and aluminum nitride grain boundaries and to migration polarization. |
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