GaSe晶体的掺S生长及性能研究

当生长掺S的GaSe单晶时, 熔体的强烈对流和溶质扩散使得生长出大尺寸的晶体较为困难。本实验采用改进的Bridgman炉, 并结合坩埚旋转技术, 成功生长出了较大尺寸的GaSe_0.89S_0.11单晶体(ϕ20×60 mm³)。采用X射线粉末衍射仪、能谱仪、纳米压痕仪和傅里叶红外光谱仪测量其结构、成分、机械和光学性质。测试结果表明, 质量分数为2.38%的 S掺杂的GaSe晶体(GaSe_0.89S_0.11)没有发生结构相变; 它的机械性能得到了明显的改善, 同时光学性能也得到了一定的提高。

Growth and Characterization of Sulfur-doped GaSe Single Crystals

It is difficult to obtain high quality sulfur-doped GaSe single crystal due to the intensive convection and solution diffusion in the melt. High quality GaSe_0.89S_0.11 single crystal with dimensions of ϕ20 mm×60 mm was successfully grown by Bridgman method using modified furnace with crucible rotation technique. The crystal was characterized by using energy dispersive spectrometer, X-ray diffractometer, nanoindentation, and Fourier infrared spectrometer. The measured results indicate that the sulfur-doped GaSe crystal with sulfur level of 2.38wt% shows significantly improved mechanical properties. The infrared transmission tests indicate that it has slightly higher transmittance in the range of 0.62-12.5 µm than the pure GaSe crystal. The results demonstrate that the modified Bridgman method could be used to produce high quality sulfur-doped GaSe crystals.