Metal organic chemical vapor deposition (MOCVD) of oxides and ferroelectric materials

The electrical properties of thin-film oxides span a tremendous range from insulating to superconducting. As a consequence, they are now finding an increasing number of applications in electronics and opto-electronics, both as stand-alone layers and for the provision of added functionality to electronic circuits, especially silicon. The modified precursor delivery technologies (e.g. aerosol or liquid delivery or injection techniques) coupled with improved precursors, and better engineering of the deposition kit, have transformed the prospects for the deposition of these materials by MOCVD. It is now possible to exploit the many traditional advantages of MOCVD, especially over other routes to thin-film oxide deposition. A wide range of oxides and particularly complex ferroelectric oxides are being produced on substrates of up to 200 mm in diameter. This paper highlights the progress and real advantages that MOCVD has for thin-film oxide deposition, including the design of improved precursors. Examples of the deposition of dielectric layers and lead-based ferroelectric layers for uncooled thermal imaging, and MEMS actuation applications are presented.