Standard Gibbs Energy of Formation of β-Silicon Nitride |
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| Authors: | Zdenk Pánek |
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| Affiliation: | Institute of Inorganic Chemistry, Slovak Academy of Sciences, SK-842 36 Bratislava, Slovakia |
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| Abstract: | Experimental thermochemical data (temperature, pressure) corresponding to the equilibrium conditions between finegrained β-SiC and β-Si3N4 for carbon activity a (C) = 1 are presented. Based on these data, the temperature dependence of ΔG°f(β-Si3N4) has been expressed for standard states Si( s ), C( s ), and p(N2) = 0.1 MPa by the equation ΔA°f(β-Si3N4) = (-995.9 + 0.4547 T/K) kJ mol for T/K ε〈1650; 1968〉. |
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