Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy |
| |
| Authors: | A. L. Gurskii H. Hamadeh H. Körfer G. P. Yablonskii V. M. Zelenkovskii T. V. Bezjazychnaja M. Heuken K. Heime |
| |
| Affiliation: | (1) Institute of Physics, Belarus Acad. Sci., F. Skaryna av., 68, 220072 Minsk, Belarus;(2) Institut für Halbleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen, Germany;(3) Institute of Physical- Organical Chemistry, Belarus Acad. Sci., F.Skaryna av. 68, 220072 Minsk, Belarus;(4) AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany |
| |
| Abstract: | The reconstruction of the bound excitonic spectra of MOVPE-grown ZnSe:N samples caused by thermal annealing was observed. The results of the low temperature photoluminescence, reflection and SIMS measurements show that this reconstruction is caused neither by the strain effect nor by the removal of hydrogen from the samples. The calculation of the defect structure and energy by the SCF MO LCAO method was carried out, and a new stable configuration of the Nse center has been found. A model of reconstruction of the nitrogen centers is proposed, assuming that the transition of NSe centers from a less stable state with distorted Td configuration into the energetically more favorable distorted C3v configuration occurs due to thermal annealing, resulting in the corresponding changes in the luminescence spectra. |
| |
| Keywords: | MOVPE ZnSe luminescence exciton annealing doping |
| 本文献已被 SpringerLink 等数据库收录！ |
|
