4He Impurity Effect on the Positive Ion Mobility in Liquid 3He |
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| Authors: | Victor Efimov Ken Obara Daigo Ueno Akira Yamaguchi Hidehiko Ishimoto |
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| Affiliation: | (1) Present address: Institute of Solid State Physics RAS, Chernogolovka, Russia;(2) The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan |
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| Abstract: | The behaviour of 4He impurities has been investigated through positive ion mobility measurements in liquid 3He at milliKelvin temperatures. In spite of the enormous surface area of the cell, the influence of 4He lasted for hundreds of hours at temperatures of  20 mK. However below 10 mK, the 4He impurities were quickly frozen out on the cell walls and we were free from the impurity problem. Nevertheless the multiple ion signal occasionally appeared even at a few mK, although it disappeared for a number of ionization pulses. |
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