Formation of CoNx ultra-thin films during direct-current nitrogen ion sputtering in ultrahigh vacuum |
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| Authors: | Chiung-Wu Su Yen-Chu ChangTsung-Hsuan Tsai Sheng-Chi ChangMing-Siang Huang |
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| Affiliation: | Department of Electrophysics, National Chiayi University, 300 Syuefu Rd., Chiayi 60004, Taiwan |
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| Abstract: | This study reports the formation of ultra-thin cobalt nitride (CoNx) films on a Co/ZnO(002) crystal by low-energy ion sputtering of nitrogen in an ultrahigh vacuum system. The CoNx film formed during ion bombardment in which the nitrogen plasma (N+) results in both sputtering and implantation in the formation process of CoNx, especially for the Co adsorbed layers. Auger electron spectroscopy analysis shows that the composition ratio x as a function of sputtering time was highly related to the N+ ion energy that was varied from 0.5 to 2 keV. The composition ratio x of CoNx films is inversely proportional to the ion energy. Low-energy ion sputtering is possible to fabricate ultra-thin CoNx films and to adjust their chemical compositions. |
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| Keywords: | Ultra-thin films Sputtering Ion implantation Auger electron spectroscopy (AES) Nitrides |
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