| 金属和SiC复合薄膜的应力及应力梯度控制技术 |
| |
| 引用本文： | 纪明,陈哲,田大宇,王玮,张国炳,张海霞.金属和SiC复合薄膜的应力及应力梯度控制技术[J].纳米技术与精密工程,2008,6(1):72-75. |
| |
| 作者姓名： | 纪明 陈哲 田大宇 王玮 张国炳 张海霞 |
| |
| 作者单位： | 北京大学微电子学研究所微米／纳米加工技术国家重点实验室,北京100871 |
| |
| 基金项目： | 北京市自然科学基金
,
北京市预研基金 |
| |
| 摘 要： | 等离子增强化学气相沉积（PECVD）SiC谐振器的制作面临导电和应力及应力梯度控制问题．为了解决导电问题，采用金属W作为导电材料，它耐断腐蚀，可简化工艺．使W薄膜应力最小的溅射条件为：Ar压力2．0Pa，功率300W，反溅射工艺；为了解决应力梯度问题，采用双层金属结构、退火和离子注入3种手段．在离子注入电压120keV、剂量1．6×10^16cm^-2、不退火的条件下，可以得到应力梯度最小、结构完好的PECVD SiC谐振器.
|
| 关 键 词： | SiC W 退火 离子注入 应力 应力梯度 |
| 文章编号： | 1672-6030（2008）01-0072-04 |
| 收稿时间： | 2007-08-16 |
Stress and Stress Gradient Control Technology of Multi-Layer Metal-SiC Thin Film |
| |
| JI Ming,CHEN Zhe,TIAN Da-yu,WANG Wei,ZHANG Guo-bing,ZHANG Hai-xia.Stress and Stress Gradient Control Technology of Multi-Layer Metal-SiC Thin Film[J].Nanotechnology and Precision Engineering,2008,6(1):72-75. |
| |
| Authors: | JI Ming CHEN Zhe TIAN Da-yu WANG Wei ZHANG Guo-bing ZHANG Hai-xia |
| |
| Affiliation: | ( National Key Laboratory of Nano/Micm Fabrication Technology, Institute of Microelectronics, Peking University, Beijing 100871, China) |
| |
| Abstract: | Electric conduction, stress and stress gradient control are two key points in fabricating plasma enhanced chemical vapor deposition（PECVD） silicon carbide resonators. Metal tungsten was chosen to solve the first problem with corrosion prevention property in hydrofluoric acid, which can simplify technology process. The match sputtering condition of minimizing the stress of tungsten fill was as follow： Argon pressure is 2.0 Pa, power is 300 W, and back sputtering. Annealing, ion-implantation and sputtering two layers of metal films were introduced to release stress gradient in multi-layers. The results show that no annealing, 120 keV ion-implantation voltage, 1.6 × 10^16 cm^-2 dosage are the best technological conditions to fabricate silicon carbide resonators. |
| |
| Keywords: | silicon carbide tungsten annealing ion-implantation stress stress gradient |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
