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Hot isostatic pressing of Si3N4 with Y2O3 additions
Authors:O Yeheskel  Y Gefen  M Talianker
Affiliation:(1) Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva, Israel;(2) Nuclear Research Centre - Negev, PO Box 9001, Beer Sheva, Israel
Abstract:The effect of Y2O3 additive on the properties of hot isostatically pressed silicon nitride was studied. The influence of small additions of Y2O3 on the densification of silicon nitride was investigated. The density and elastic moduli of the product increase with increasing of the Y2O3 additions. The hot isostatically pressed pure silicon nitride consists of agr-Si3N4, beta-Si3N4and Si2N2O; phase content of the hot isostatically pressed silicon nitride with 10 wt % Y2O3addition consists of beta-Si3N4, yttrium silicate and Y2Si3O3N4. The effect of the outgassing of the specimens prior to hot isostatical pressing on the properties of the final material is discussed.
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