A new static induction thyristor (SITh) analytical model |
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| Authors: | Wang J. Williams B.W. |
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| Affiliation: | Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh; |
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| Abstract: | In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed |
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