| Advanced SPICE-Modeling of 4H-SiC MESFETs |
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| 引用本文： | XU Yue-hang XU Rui-min YAN Bo WANG Lei. Advanced SPICE-Modeling of 4H-SiC MESFETs[J]. 中国电子科技, 2007, 5(1): 62-65 |
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| 作者姓名： | XU Yue-hang XU Rui-min YAN Bo WANG Lei |
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| 作者单位： | School of Electronic Engineering, University of Electronic Science and Technology of China Chengdu 610054 China |
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| 摘 要： | A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.
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| 关 键 词： | 四氢碳化硅MESFET SPICE模型 漏电流 有源层 静电特性 |
| 收稿时间： | 2006-06-10 |
Advanced SPICE-Modeling of 4H-SiC MESFETs |
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| XU Yue-hang,XU Rui-min,YAN Bo,WANG Lei. Advanced SPICE-Modeling of 4H-SiC MESFETs[J]. Journal of Electronic Science Technology of China, 2007, 5(1): 62-65 |
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| Authors: | XU Yue-hang XU Rui-min YAN Bo WANG Lei |
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| Abstract: | A modified drain source current suitable for simulation program with integrated circuit emphasis(SPICE) simulations of SiC MESFETs is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint's own model(TOM). The model,which is single piece and continuously differentiable,is verified by measured direct current(DC) I-V curves and scattering parameters(up to 20 GHz). |
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| Keywords: | 4H-SiC MESFET large signal model simulation program with integrated circuit emphasis (SPICE) |
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