AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy |
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| Authors: | Sullivan G.J. Asbeck P.M. Chang M.F. Miller D.L. Wang K.C. |
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| Affiliation: | Rockwell International Corporation, Microelectronics Research & Development Center, Thousand Oaks, USA; |
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| Abstract: | The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory. |
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