High-performance long-wavelength (λ~1.3 μm) InGaAsPNquantum-well lasers

We demonstrate high-performance InGaAsPN quantum well based long-wavelength lasers grown on GaAs substrates, nitrogen containing lasers emitting in the λ=1.2- to 1.3-μm wavelength range were grown by gas source molecular beam epitaxy using a RF plasma nitrogen source. Under pulsed excitation, lasers emitting at λ=1.295 μm exhibited a record low threshold current density (J_TH) of 2. 5 kA/cm². Lasers grown with less nitrogen in the quantum well exhibited significantly lower threshold current densities of J_TH =1.9 kA/cm² at λ=1.27 μm and J_TH=1.27 kA/cm² at λ=1.2 μm. We also report a slope efficiency of 0.4 W/A and an output power of 450 mW under pulsed operation for nitrogen containing lasers emitting at 1.2 μm