High-performance long-wavelength (λ~1.3 μm) InGaAsPNquantum-well lasers |
| |
Authors: | Gokhale MR Wei J Studenkov PV Wang H Forrest SR |
| |
Affiliation: | Dept. of Electr. Eng., Princeton Univ., NJ; |
| |
Abstract: | We demonstrate high-performance InGaAsPN quantum well based long-wavelength lasers grown on GaAs substrates, nitrogen containing lasers emitting in the λ=1.2- to 1.3-μm wavelength range were grown by gas source molecular beam epitaxy using a RF plasma nitrogen source. Under pulsed excitation, lasers emitting at λ=1.295 μm exhibited a record low threshold current density (JTH) of 2. 5 kA/cm2. Lasers grown with less nitrogen in the quantum well exhibited significantly lower threshold current densities of JTH =1.9 kA/cm2 at λ=1.27 μm and JTH=1.27 kA/cm2 at λ=1.2 μm. We also report a slope efficiency of 0.4 W/A and an output power of 450 mW under pulsed operation for nitrogen containing lasers emitting at 1.2 μm |
| |
Keywords: | |
|
|