Semi-insulating blocked planar BH GaInAsP/InP laser with high powerand high modulation bandwidth |
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| Authors: | Koren U Miller BI Eisenstein G Tucker RS Raybon G Capile RJ |
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| Affiliation: | AT&T Bell Labs., Holmdel, NJ; |
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| Abstract: | A high-power, high-speed GaInAsP/InP laser operating at a 1.3-μm wavelength is described. The laser is obtained with three epitaxial growth steps and has semi-insulating InP blocking layers resulting in low parasitic capacitance. A 3 dB bandwidth of 14.7 GHz together with 38 mW output power has been achieved |
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