Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure |
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Authors: | Shao-Yen Jung-Hui Hsuan-Wei Kun-Chieh Tze-Hsuan Kang-Ping Tzung-Min Kuo-Yen Wen-Shiung |
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Affiliation: | aDepartment of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan;bDepartment of Electronic Engineering, National Kaohsiung Nomal University, 62 Shenjhong Road, Yanchao Township, Kaohsiung, Taiwan |
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Abstract: | This paper reports on new GaN sensors using a Pd-mixture-Pd triple-layer sensing structure to enhance their sensitivity to hydrogen at the tens of ppm level. The proposed hydrogen sensor biased with a constant voltage produced relatively high sensing responses of 4.84 × 105% at 10,100 ppm and 8.7 × 104% at 49.1 ppm H2 in N2. The corresponding barrier height variations are calculated to be 220 and 168 mV. When the sensor is biased by a constant current with maximum power consumption of 0.4 mW, a sensing voltage as an output signal showed a voltage shift of more than 17 V (the highest value ever reported) at 49.1 ppm H2 in N2. By comparison to Pd-deposited GaN sensors, the improvement in static-state performance is likely attributed to double dipole layers formed individually at the Pd–GaN interface and inside the mixture. Moreover, voltage transient response and current transient response to various hydrogen-containing gases were experimentally studied. The new finding is that the former response time is shorter than the latter one. |
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Keywords: | Dipole GaN Hydrogen Sensor |
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