| 发展中的GaN微电子(一) |
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| 引用本文： | 赵正平.发展中的GaN微电子(一)[J].中国电子科学研究院学报,2011,6(3):256-262. |
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| 作者姓名： | 赵正平 |
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| 作者单位： | 中国电子科技集团公司,北京,100846 |
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| 摘 要： | GaN微电子是继GaAs微电子之后在21世纪新发展起来微电子领域的国际战略制高点.从功率密度、高频性能、增强型器件与数字电路等方面阐述了GaN微电子最新的关键技术突破,并介绍了GaN微电子从UHF频段到3 mm波段在通讯、雷达和电子对抗等领域的应用研究进展.从GaN HEMT器件的电流崩塌、栅漏电流、逆压电效应、热电子...
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| 关 键 词： | GaN HEMT 微波单片集成电路 增强型 放大器 可靠性 |
Developing GaN microelectronics |
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| ZHAO Zheng-ping.Developing GaN microelectronics[J].Journal of China Academy of Electronics and Information Technology,2011,6(3):256-262. |
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| Authors: | ZHAO Zheng-ping |
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| Affiliation: | ZHAO Zheng-ping(China Electronics Technology Group Corporation,Beijing 100846,China) |
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| Abstract: | GaN microelectronics is the 21st century new international strategic heights in micro-electronic field after GaAs microelectronics developed.This article elaborated the latest breakthroughs in the key technology of GaN microelectronics about power density,high frequency performance,enhanced devices and digital circuit etc.And GaN microelectronics from UHF band to 3 mm band in the application of the communications,radar and electronic confrontation is reviewed.From the analysis of GaN HEMT devices failure me... |
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| Keywords: | GaN HEMT MMIC e-mode amplifier reliability |
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