宽禁带功率电子器件及其应用专辑特邀主编述评

正相较于传统的硅器件,基于宽禁带半导体材料的功率电子器件在很多方面都体现出了优越的性能,符合功率变换器高效率、高工作温度及高功率密度的发展需求。近几年来,碳化硅(SiC)和氮化镓(GaN)功率器件的制造技术发展迅速,多家公司推出了系列商业化产品,宽禁带功率电子器件及其

Guest Chief Editor Commentary of Special Issue on Wide Bandgap Power Devices and Their Applications

Compared with the traditional silicon devices, the power electronic devices based on the wide bandgap semiconductor material reflect the superior performance in many respects, which meet the requirements of the high efficiency, high power converter working temperature and the high power density. In recent years, silicon carbide (SiC) and gallium nitride (GaN) power device manufacturing technology has developed rapidly, and many companies launched a series of the commercial products. The wide band gap power electronic devices and their applications have become one of the hot spot in current power electronics disciplines research. To concentrated show the latest research results and progress of the wide bandgap semiconductor devices and applications, Journal of Power Supply will launch the Special Issue on Wide Band Gap Power Electronic Device and Their Applications.