Mesoscale modelling of the yield point properties of silicon crystals |
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| Affiliation: | 1. Laboratoire d''Etude des Microstructures, CNRS–ONERA, Avenue de la Division Leclerc, BP 72, 92322 Châtillon Cedex, France;2. Laboratoire de Métallurgie Structurale, Bât. 410, Université Paris–Sud, 91405 Orsay Cedex, France;1. Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Apdo. Postal 356, Ensenada, Baja California C.P. 22800, Mexico;2. Laboratory for Materials Chemistry, National Institute of Chemistry, Hajdrihova 19, SI-1000 Ljubljana, Slovenia;3. Instituto Potosino de Investigación Científica y Tecnológica, División de Materiales Avanzados, San Luis Potosí, Mexico;4. Otto-von-Guericke-Universität Magdeburg, FNW-IEP, Universitätsplatz 2, 39106 Magdeburg, Germany;1. School of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, China;2. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China;1. Institute of Electron Technology, 02-668 Warsaw, Al. Lotników 32/46, Poland;2. Institute of Physics Polish Academy of Sciences, 02-668 Warsaw, Al. Lotników 32/46, Poland;1. Department of Physics and Astronomy, University of Bologna, Italy;2. CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UCBN, 6, Bd Maréchal Juin, 14050 Caen Cedex 4, France |
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| Abstract: | The yield point properties that characterize silicon crystals in the temperature domain where Peierls forces govern the dislocation mobility have been investigated in easy glide conditions with the help of a three-dimensional mesoscopic simulation of dislocation dynamics. The influence of temperature, applied strain rate and initial dislocation microstructure, the latter consisting of a random initial distribution of dislocation sources, were examined in detail and globally found in fair agreement with the available experimental results. A critical examination of a well-known model by Alexander and Haasen has been performed, leading to a discussion and reformulation of the law accounting for the multiplication rate of dislocations. The present lack of knowledge on the mechanisms by which new dislocation sources are formed during the plastic deformation of silicon crystals is emphasized. |
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