| ZnS离子束抛光过程中的粗糙度演变 |
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| 引用本文： | 武磊,刘卫国,蔡长龙,陈智利,周顺,郭延. ZnS离子束抛光过程中的粗糙度演变[J]. 西安工业大学学报, 2014, 0(12): 947-952 |
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| 作者姓名： | 武磊 刘卫国 蔡长龙 陈智利 周顺 郭延 |
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| 作者单位： | 西安工业大学光电微系统研究所 |
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| 基金项目： | 高档数控机床与基础制造装备科技重大专项(2013ZX04006011);总装先进制造技术项目(51318020109);西安市产业技术创新计划项目(CX12161) |
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| 摘 要： | 为了得到离子束抛光ZnS的工艺参数,采用微波离子源作为抛光源,分析了离子束能量、离子束流大小、离子束入射角度对ZnS刻蚀速率及表面粗糙度的影响,比较了ZnS刻蚀速率及表面粗糙度的变化趋势.研究结果表明:当离子束能量为400eV、离子束流大小为35mA、入射角度为45°时,ZnS表面粗糙度降低了0.23nm.
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| 关 键 词： | 微波离子源 离子束抛光 刻蚀机理 刻蚀速率 表面粗糙度 |
Roughness Evolution Research of ZnS by Ion Beam Polishing Process |
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| WU Lei;LIU Wei-guo;CAI Chang-long;CHEN Zhi-li;ZHOU Shun;GUO Yan. Roughness Evolution Research of ZnS by Ion Beam Polishing Process[J]. Journal of Xi'an Institute of Technology, 2014, 0(12): 947-952 |
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| Authors: | WU Lei LIU Wei-guo CAI Chang-long CHEN Zhi-li ZHOU Shun GUO Yan |
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| Affiliation: | WU Lei;LIU Wei-guo;CAI Chang-long;CHEN Zhi-li;ZHOU Shun;GUO Yan;Micro-Optoelectrical System Laboratory,Xi’an Technological University; |
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| Abstract: | In order to obtain parameters of ZnS by ion beam polishing,the polishing source puts to use a microwave ion.The variation curves of etching rate and surface roughness of ZnS are compared by analyzing factors,including the energy of the ion beam,ion beam current density and ion beam incident angle.The results show that when the energy of ion beam is 400eV,the current density of ion beam is 35mA and incident angle is 45°,surface roughness of ZnS decreases maximally 0.23nm. |
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| Keywords: | microwave ion source ion beam polishing etching principle etching rate surface roughness |
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