不同特征尺寸SRAM质子单粒子效应实验研究

利用中国原子能科学研究院100 MeV质子回旋加速器开展了一系列不同特征尺寸双数据速率（DDR）静态随机存储器（SRAM）单粒子效应实验研究。获得了不同能量、不同入射角度下3款SRAM的单粒子翻转（SEU）截面曲线。分析了入射质子能量及角度对不同特征尺寸SRAM的SEU饱和截面的影响和效应规律，并利用蒙特卡罗方法对65 nm SRAM SEU特性进行了模拟。研究结果表明：随特征尺寸的减小，SEU饱和截面会出现不同程度的降低，但降低程度会由于多单元翻转（MCU）的增多而变缓；随入射角度的增加，MCU规模及数量的增加导致器件截面增大；3款SRAM所采用的位交错技术并不能有效抑制多位翻转（MBU）的发生。

Experimental Research on Single-event Effect in SRAMs with Different Feature Sizes

Experimental research on single-event effects of double data rate (DDR) static random access memory (SRAM) with different feature sizes was carried out at 100 MeV proton cyclotron accelerator of China Institute of Atomic Energy. Single-event upset (SEU) cross-section curves with different proton energy and different incident angles were obtained for these SRAMs. The effects of incident proton energy and angles on the SEU saturation cross-section of SRAMs with different feature sizes were analyzed, and the SEU characteristics of 65 nm SRAM were simulated by Monte Carlo method. The results show that the SEU saturation cross-section decreases with the decrease of feature size, but the reduction is slowed down due to the increase of multiple-cell upset (MCU). The number of MCU increases with the incident angle, resulting in the increase of SEU cross-section of the device. The data-level interleaving technology used in the three kinds of SRAMs cannot effectively suppress the occurrence of multiple-bit upset (MBU).