一种阳极连接P型埋层的AlGaN/GaN肖特基二极管

在传统AlGaN/GaN肖特基二极管中,阳极漏电始终是制约器件耐压提高的一个重要因素。因此文中研究了在缓冲层中生长P型埋层并与阳极相连的AlGaN/GaN肖特基二极管结构 AC-PBL FPs SBD来抑制阳极的泄漏电流。同时,在二极管的两级均加上场板来调制该器件的表面电场分布。经过仿真验证可知,该结构的阳极关断泄漏电流得到了有效抑制,同时辅助耗尽沟道内的2DEG,扩大空间电荷区,进而提高了器件的耐压特性。该结构的击穿电压为733 V,与传统GET SBD器件相比,击穿电压提高了近3.4倍,Baliga优值提升了近11.6倍,说明该器件可以应用在电力电子线路中。

A AlGaN/GaN Schottky Diode with Anode Connected P-type Buried Layer

In the traditional AlGaN/GaN Schottky diodes, the anode leakage is an important factor that limits the enhancement of the breakdown voltage of the device.Therefore,aAlGaN/GaN Schottky diode structure with a P-type buried layer grown in the buffer layer and connected to the anode (AC-PBL FPs SBD) was investigated to suppress the anode leakage current. Meanwhile, field plates were added to both anode and cathode to modulate the surface electric field distribution of the device. The simulation proved that the anode leakage current of the structure was effectively suppressed, and the 2DEG in the channel was depleted. The space charge region was enlarged, and the breakdown voltage of the device was improved. The breakdown voltage of this structure was 733 V. Compared with the traditional GET SBD device, the breakdown voltage was increased by nearly 3.4 times, and the Baliga value was improved by nearly 11.6 times, indicating that the device could be applied in power electronic circuits.