Effect of a ZnO buffer layer on the characteristics of MgZnO thin films grown on Si (100) substrates by radio-frequency magnetron sputtering |
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Authors: | Jin Young Moon Hyunghoon Kim Young Yi Kim Hong Seung Kim |
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Affiliation: | a School of Materials Science and Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-gu, Daegu 702-701, Republic of Korea b School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea c Major of Semiconductor Physics, Korea Maritime University, Busan 606-791, Republic of Korea |
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Abstract: | This is a report on the effect of a ZnO buffer layer on the microstructures and optical properties of MgZnO thin films grown on Si (100) substrates by radio frequency magnetron sputtering. For the sample without the ZnO buffer layer, the microstructural analyses carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM) revealed the formation of Mg2Si in the interface between the Si substrate and the MgZnO thin film. Mg2Si induced the random oriented polycrystalline MgZnO thin film. For the sample with the ZnO buffer layer, a few Mg2Si were observed. An epitaxial relationship between the Si substrate and the MgZnO thin film was formed. In both samples, the photoluminescence (PL) investigation showed a small blue shift of the emission peak, which was owing to the incorporation of Mg atoms in ZnO by co-sputtering the MgO and ZnO targets. In addition, the sample with the ZnO buffer layer showed the enhanced PL intensity, when compared with the sample without the buffer layer. |
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Keywords: | 61 16 Bg 68 35 Ct 78 66 Hf |
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