Crystallization and electrical properties of ITO:Ce thin films for flat panel display applications |
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Authors: | Se Il Kim Sung Ryong Choi Ji Hyang Jang |
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Affiliation: | a Department of Materials Science and Engineering, Pusan National University, Busan 609-735, Republic of Korea b Digital Information Materials Div., Samsung Corning Precision Glass Co., LTD., 644 Jinpyeong-dong, Gumi-si, Gyeongsangbuk-do, 730-735, Republic of Korea c Department of Electronics Engineering, Pusan National University, Busan 609-735, Republic of Korea |
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Abstract: | ITO and ITO:Ce films were deposited by DC magnetron sputtering using an ITO (SnO2: 10 wt.%) target and CeO2 doped ITO (CeO2: 0.5, 3.0, 4.0 and 6.0 wt.%) ceramic targets, respectively, on unheated non-alkali glass substrates (corning E2000). The as-deposited films were annealed at 200 °C in an Ar atmosphere at a pressure of 1 Pa. The crystallization temperature of the ITO film was increased by introducing Ce atoms because they decrease the level of crystallinity. It was also confirmed that the etching rate, surface morphology and work function were improved by the addition of Ce atoms despite there being increased resistivity. The current voltage (I-V) characteristics of the OLED devices deteriorated with increasing Ce content in the ITO anode, which was attributed to a decrease in carrier density despite there being a high work function. Therefore, the carrier density is one of the most important factors that determine the turn-on voltage for OLED applications. |
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Keywords: | Cerium doping Amorphous Magnetron sputtering Work function OLED |
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