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Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN |
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| Authors: | Han-Ki Kim Min-Su Yi |
| Affiliation: | a Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701, South Korea b Department of Materials Science and Engineering, Kyungpook National University, Sangju, Gyeongbuk, 742-711, Republic of Korea c Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736, Republic of Korea |
| Abstract: | The electrical, structural, and optical characteristics of Ag/ZnO-doped In2O3 (IZO) ohmic contacts to p-type GaN:Mg (2.5 × 1017 cm− 3) were investigated. The Ag and IZO (10 nm/50 nm) layers were prepared by thermal evaporation and linear facing target sputtering, respectively. Although the as-deposited and 400 °C annealed samples showed rectifying behavior, the 500 and 600 °C annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact. The annealing of the contact at 600 °C for 3 min in a vacuum (~ 10− 3 Torr) resulted in the lowest specific contact resistivity of 1.8 × 10− 4 Ω·cm2 and high transparency of 78% at a wavelength of 470 nm. Using Auger electron spectroscopy, depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the electrical properties of the Ag/IZO contacts. |
| Keywords: | Ag/ZIO p-GaN Ohmic contact Specific contact resistivity AES depth profile |
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